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the homework for the students of the eighth year
exercise 1. find all the stative verbs in the list below and define their categories, if it is possible. (найдите все глаголы-состояния в списке ниже и охарактеризуйте их (по
example: to desire (желать) – является глаголом, выражающим состояние, и относится к категории «чувства и эмоции».
to hate, to adore, to suppose, to trust, to feel, to give, to envy, to belong, to have, to have tea.
exercise 2. explain the use of the tense. (объясните употребление времени)
example: houston, we have a problem. – данное предложение употреблено во времени present simple, потому что глагол have использован в значении “иметь”, что делает его глаголом, выражающим состояние. (глаголы-состояния не могут быть употреблены в длительных временах).
one more example: we’re having tea with my classmate in the kitchen right now. - в данном примере глагол have входит в состав устойчивого выражения “to have tea” (пить чай), означающего не состояние, а процесс; что позволяет употреблять его в длительном времени.
а) i haven’t eaten your cake. i see you eating this cake right now, tom.
b) helen thinks, i am seeing someone.
c) where is your dad? he’s fitting an alarm system now.
d) this dress fits you. you should buy it.
e) she appears to be a very smart girl. i will ask her to let me copy her homework.
f) nick jonas is appearing tonight.
g) i like irises because they smell good.
e) why are you smelling the cake, john? i like the smell of cinnamon.
exercise 3. translate these sentences from russian into english.
w) выходи. я тебя вижу.
e) кейт встречается сегодня с психологом.
l) имбирь на вкус пряный.
l) зачем ты пробуешь этот соус?
d) он кажется хорошим парнем, но это не так.
o) она выступает сегодня в пьесе «сон в летнюю ночь»
n) что ты думаешь об этой школе
The junction field-effect transistor action. It was previously emphasized that one of the main properties of the bipolar transistor is that it is a current-controlled amplifying device; the output current is controlled by a small input current. In the case of the field-effect transistor (FET) it is the input voltage which controls the output current. The current drawn by the input is usually negligible. This is a great advantage where the signal comes from a device such as capacitor microphone or piezoelectric transducer, which is unable to supply a significant current. FET’s are basically of two types: the junction field-effect transistor (JFET) and the insulated gate field-effect transistor (IGFET). The latter is more commonly known by a name metal-oxide semiconductor field-effect transistor (MOSFET).
At a point along the bar a region of p-type silicon forms a p-n junction. In normal operation, the junction is reverse-biased. The lower contact on the bar is called the source and the upper contact the drain. The electron current flows from source to drain and is controlled by the voltage applied to the p-region called the gate.
An alternative type of construction is the p-channel device where the gate is made of n-type material.
The operation of the JFET depends upon variations in the size of the depletion layer at the reverse-biased gate junction. The p-type gate is much more heavily doped than the n-type bar, so that the depletion region exists almost entirely in the bar. The gate carries a negative bias voltage relative to the source which give rise to the particular shape of the depletion region: this is wider at the top than the bottom. The wider the depletion layer, the narrower the channel there is available for the flow of electrons from source to drain, since the depletion region itself being devoid of current carries, behaves like an insulator.
Unlike the bipolar transistor, the FET employs only majority carriers for its operation. It is therefore sometimes called the unipolar transistor and is less susceptible than the bipolar type to temperature changes and nuclear radiation.
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